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 SD263C..S50L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 375 A
FEATURES
* High power FAST recovery diode series * 4.5 s recovery time * High voltage ratings up to 4500 V * High current capability * Optimized turn-on and turn-off characteristics * Low forward recovery
DO-200AB (B-PUK)
RoHS
COMPLIANT
* Fast and soft reverse recovery * Press PUK encapsulation * Case style conform to JEDEC DO-200AB (B-PUK) * Maximum junction temperature 125 C * Lead (Pb)-free
PRODUCT SUMMARY
IF(AV) 375 A
TYPICAL APPLICATIONS
* Snubber diode for GTO * High voltage freewheeling diode * Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IF(AV) IF(RMS) IFSM VRRM trr TJ 50 Hz 60 Hz Range TEST CONDITIONS VALUES 375 Ths 55 408 5500 5760 3000 to 4500 4.5 TJ 125 - 40 to 125 V s C A UNITS A C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 30 SD263C..S50L 36 40 45 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 3000 3600 4000 4500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 3100 3700 4100 4600 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 93173 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
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SD263C..S50L Series
Vishay High Power Products
FORWARD CONDUCTION
PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VF(TO)1 VF(TO)2 rf1 rf2 VFM No voltage reapplied 50 % VRRM reapplied No voltage reapplied 50 % VRRM reapplied VALUES 375 (150) 55 (85) 725 5500 5760 4630 Sinusoidal half wave, initial TJ = TJ maximum 4850 151 138 107 98 1510 1.56 1.71 1.64 m (I > x IF(AV)), TJ = TJ maximum Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.53 3.20 V kA2s V kA2s A UNITS A C
Fast Recovery Diodes (Hockey PUK Version), 375 A
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum (I > x IF(AV)), TJ = TJ maximum (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop
RECOVERY CHARACTERISTICS
MAXIMUM VALUE AT TJ = 25 C CODE trr AT 25 % IRRM (s) 5.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 150 C
IFM
dI/dt (1) (A/s) 100
Vr (V) - 50
trr AT 25 % IRRM (s) 4.5
Qrr (C) 680
Irr (A) 240
trr t Qrr IRM(REC)
dir dt
S50
Note (1) dI/dt = 25 A/s, T = 25 C J
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.11 0.05 9800 (1000) 230 K/W N (kg) g UNITS C
DO-200AB (B-PUK)
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93173 Revision: 14-May-08
SD263C..S50L Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.012 0.014 0.018 0.026 0.045 DOUBLE SIDE 0.011 0.015 0.018 0.027 0.046 RECTANGULAR CONDUCTION SINGLE SIDE 0.008 0.014 0.019 0.027 0.046 DOUBLE SIDE 0.008 0.014 0.019 0.028 0.046 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
130 Maxim um Allowable Heatsin k Tem perature ( C) 120 110 100 90 80 70 60 50 40 30 20 10 0 50 100
M a x im um A llo w a b le H e a t sin k Te m p e ra t u re (C )
SD263C..S50L Series (Sin gle Side Cooled) R t hJ-hs (DC) = 0.11 K/W
13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 100 30
SD 2 6 3 C ..S 5 0 L S e rie s (D o ub le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 5 K / W
C o nduc tio n A ng le
C o ndu c tio n A ng le
6 0 9 0 1 2 0 1 8 0
60 30 150
90 120 180 200 250 300
20 0
30 0
4 00
5 00
Average Forward Curren t (A)
A v e r a g e Fo rw a rd C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
13 0 M a x im um A llo w a b le H e a t sin k T e m pe ra t u re ( C ) 12 0 11 0 10 0 90 80 70 60 50 40 30 20 10 0 50 1 0 0 15 0 20 0 2 5 0 3 0 0 3 5 0 40 0 45 0 A v e ra g e F o rw a rd C u rr e n t (A ) 3 0 60 90 1 2 0 1 8 0 DC
C on du ctio n Pe rio d
130 Maxim um Allowable Heatsin k Tem perature (C) S D 2 6 3 C ..S 5 0 L Se rie s ( Sin g le S id e C o o le d ) R th J-hs (D C ) = 0 .1 1 K / W 120 110 100 90 80 70 60 50 40 30 20 10 0 200 400 600 800 Average Forward Current (A) 30 60 90 120 180 DC
C o nd uc tio n Pe rio d
SD263C..S50L Series (D ouble Side Cooled) R thJ-hs (DC) = 0.05 K/W
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Document Number: 93173 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
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SD263C..S50L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 375 A
6000 180 120 90 60 30 Peak Half Sin e W ave Forward Curren t (A)
1600 Maxim um Average Forward Power Loss (W ) 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 Average Forward Current (A)
Co n duc tio n An gle
5000
M a xim u m N o n R e pe tit iv e Su rg e C u rre n t V e r su s P ulse Tr ain D ura tio n . In itial TJ = 1 2 5C N o V o lt ag e R e a pp lie d 5 0 % R at e d V RR M Re ap plie d
RM S Lim it
4000
3000
SD263C..S50L Series TJ = 125C
2000
S D 2 6 3 C ..S5 0L Se rie s
1000 0.01
0.1 Pulse Train Duration (s)
1
Fig. 5 - Forward Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
2 2 50 M a xim u m A v e ra ge Fo rw a rd P o w e r L os s (W ) 2 0 00 1 7 50 1 5 00 1 2 50 1 0 00 7 50 5 00 2 50 0 0 10 0 2 00 3 00 40 0 50 0 60 0 7 00 80 0 A v e ra g e F o rw a r d C u rre n t (A ) S D 2 6 3 C ..S 5 0 L Se rie s T J = 1 2 5 C
C o ndu ctio n Pe rio d
10000 Instantaneous Forward Current (A) DC 1 8 0 1 2 0 9 0 6 0 3 0 R M S Lim it
TJ = 25C TJ = 125C 1000
SD263C..S50L Series 100 1 2 3 4 5 6 7 8 Instantan eous Forw ard Voltage (V )
Fig. 6 - Forward Power Loss Characteristics
Fig. 9 - Forward Voltage Drop Characteristics
55 0 0
1 T ra n sie n t Th e rm a l Im pe d a n c e Z thJ-hs ( K / W ) S t e a d y St a t e V alu e R th J- hs = 0 .1 1 K/ W (S in gle Sid e C o o le d ) 0 .1 R th J- hs = 0 .0 5 K/ W ( D o u b le S id e C o o le d ) ( D C O p e ra t io n )
P e a k Ha lf Sin e W a v e Fo rw a rd C u rre n t ( A )
A t A n y R a t e d Lo a d C o n d itio n A n d W ith 5 0 0 0 5 0 % R a te d V R RM A p p lie d F o llo w in g S u rg e In it ia l TJ = 1 2 5 C 45 0 0 @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 15 0 0 10 0 0 1 10 1 00
N um b er O f E qua l A m p litude H alf C yc le C urren t Pulse s (N )
0 .0 1 S D 2 6 3 C ..S5 0 L Se rie s
S D 2 6 3 C ..S5 0 L S e r ie s
0 .0 0 1 0 .0 0 1
0 .0 1
0 .1
1
10
Sq u a r e W a v e P u lse D u rat io n ( s)
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93173 Revision: 14-May-08
SD263C..S50L Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A
500 450 400 Fo rw a rd R ec o v e ry (V ) 350 300 250 200 150 100 50 0 0 2 00 4 00 6 00 80 0 1 00 0 1 20 0 1 40 0 1 600 18 00 2 0 00 R a t e O f R ise O f Fo rw a rd C u rre n t - d i/ d t (A / u s) SD 2 6 3 C ..S 5 0 L Se rie s TJ = 2 5C
V
FP
I
TJ = 1 2 5C
Fig. 11 - Typical Forward Recovery Characteristics
9 M a x im um R e v e rse R e c o v e r y Tim e - Trr ( s) M a xim u m Re v e rse R e c o v e ry C urre n t - Irr (A ) 8 7 6 5 4 3 2 10 10 0 10 0 0
I FM = 100 0 A Sine Pu lse 50 0 A 1 50 A
60 0 S D 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 C ; V r > 1 0 0 V 50 0 40 0 30 0 20 0 10 0 0 0 50 1 00 15 0 20 0 2 50 3 0 0 S D 2 6 3 C ..S5 0 L S e r ie s TJ = 1 2 5 C ; V r > 1 0 0 V
I FM = 10 00 A Sine Pu lse 500 A 1 50 A
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /s)
Rate O f Fall O f Fo rw ard C urre nt - d i/dt (A /s)
Fig. 12 - Recovery Time Characteristics
Fig. 14 - Recovery Current Characteristics
1 40 0 M a x im u m Re v e r se R e c o v e r y C h a r ge - Q rr ( C ) 1 20 0 1 00 0 8 00 6 00 4 00 2 00 0 0 50 10 0 1 50 2 00 2 50 30 0 SD 2 6 3 C ..S 5 0 L Se rie s TJ = 1 2 5 C ; V r > 1 0 0 V
150 A I FM = 1 00 0 A Sin e Pulse
1E4
10 jo ule s pe r pu lse
Peak Forward Current (A)
6 4 2 1 0 .5
500 A
1E3
0 .3
tp
SD 2 6 3 C..S5 0 L Se rie s Si nu so ida l Pu lse TJ = 1 2 5C , V RRM = 1 5 0 0 V d v /d t = 1 0 0 0 V/ s
1E2 1E 1
1E2
1E3
1E4
R ate O f Fall O f Fo rwa rd Curre nt - d i/dt ( A/s)
Pulse Basew idth ( s)
Fig. 13 - Recovery Charge Characteristics
Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics
Document Number: 93173 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com 5
SD263C..S50L Series
Vishay High Power Products
Fast Recovery Diodes (Hockey PUK Version), 375 A
1E 4
1E4
Peak Forward Current (A)
tp
4 00 1 5 00 1 00 0 2 0 00 200 1 00
5 0 Hz
Peak Forward Current (A)
1 00
50 Hz
1E3
3000 4000 6 00 0 10000 tp
SD 2 6 3 C ..S5 0 L Se rie s Si nu so id al Pu l se TC = 5 5 C , V RR M= 1 5 0 0 V d v / dt = 1 0 0 0 V/ u s
1E 3
600 1 00 0 1500 20 0 0 3000 4 00 0
400
20 0
1E2 1E 1
1E2
1E3
1E 4
1E 2 1E1
SD 2 6 3 C ..S5 0 L Se rie s Tr ape zo i dal Pu ls e TC = 5 5C, V RRM = 15 00 V d v / dt = 10 0 0V / us , d i/ d t = 3 0 0 A / us
1E 2
1E 3
1E4
Pulse Basew idth (s)
Pulse Basewidth ( s)
Fig. 16 - Frequency Characteristics
Fig. 18 - Frequency Characteristics
1E4
SD 2 6 3 C ..S5 0 L Se r ie s T rap ezo id al P uls e TJ = 1 2 5C , V RRM = 1 5 0 0 V d v / dt = 1 0 0 0 V / s d i/ d t = 3 0 0 A / s
1E4
Peak Forward Curren t (A)
Peak Forward Current (A)
tp
SD 2 6 3 C ..S5 0 L S eri es T rape z oi dal Pu lse TJ = 1 2 5C , V RRM = 1 5 0 0 V dv / d t = 1 0 0 0 V/ s di /d t = 1 0 0 A / s
tp 1 0 jo u le s pe r pu lse 6 4 2 1 0. 5 0.3
1 0 jo ule s pe r pu lse
1E3
1 0. 5 0.3
4 2
6
1E3
1E2 1E1
1E 2
1E3
1E4
1E2 1E1
1E 2
1E3
1E4
Pulse Basew idth (s)
Pulse Basew idth (s)
Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
1E 4
tp
Peak Forward Current (A)
1E 3
1000 1 5 00 2 00 0 3 00 0 4000 6 0 00
60 0 4 00
20 0
10 0 50 Hz
SD 2 6 3 C.. S5 0 L Se rie s T rap e zoi da l Pul se TC = 5 5C , V RRM = 1 5 0 0 V dv / dt = 1 0 0 0 V/ u s, di /d t = 1 0 0 A / u s
1E 2 1E1
1E 2
1E 3
1E4
Pulse Basew idth (s)
Fig. 20 - Frequency Characteristics
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93173 Revision: 14-May-08
SD263C..S50L Series
Fast Recovery Diodes Vishay High Power Products (Hockey PUK Version), 375 A
ORDERING INFORMATION TABLE
Device code
SD
1
1 2 3 4 5 6 7
26
2 Diode
3
3
C
4
45
5
S50
6
L
7
Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code L = PUK case DO-200AB (B-PUK)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246
Document Number: 93173 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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